Indlela yokwenza i-polysilicon.

1. Iyalayisha

Beka i-quartz crucible eboshiwe etafuleni lokushintshanisa ukushisa, engeza impahla eluhlaza ye-silicon, bese ufaka izinto zokufudumeza, izinto zokufudumeza kanye nekhava yesithando somlilo, ukhiphe isithando somlilo ukuze unciphise ukucindezela esithandweni ku-0.05-0.1mbar futhi ugcine i-vacuum. Yethula i-argon njengegesi evikelayo ukuze ugcine ukucindezela esithandweni ngokuyisisekelo ku-400-600mbar.

2. Ukushisisa

Sebenzisa i-heater ye-graphite ukushisa umzimba wesithando somlilo, qala uhwamulise umswakama ofakwe phezu kwezingxenye ze-graphite, ungqimba wokufakelwa, izinto zokusetshenziswa ze-silicon, njll., bese ushisa kancane kancane ukuze izinga lokushisa le-quartz crucible lifinyelele cishe ku-1200-1300.℃. Le nqubo ithatha 4-5h.

3. Ukuncibilika

Yethula i-argon njengegesi evikelayo ukuze ugcine ukucindezela esithandweni ngokuyisisekelo ku-400-600mbar. Khulisa kancane kancane amandla okushisa ukuze uvumelane nezinga lokushisa ku-crucible libe cishe ku-1500℃, futhi i-silicon eluhlaza iqala ukuncibilika. Gcina cishe i-1500℃ngesikhathi sokuncibilika kuze kuqedwe ukuncibilika. Le nqubo ithatha cishe amahora angu-20-22.

4. Ukukhula kwekristalu

Ngemuva kokuthi i-silicon eluhlaza isincibilikisiwe, amandla okushisa ayancishiswa ukuze izinga lokushisa lehle libe ngu-1420-1440.℃, okuyindawo yokuncibilika kwe-silicon. Khona-ke i-quartz crucible iya phansi kancane kancane, noma idivayisi yokufakelwa ikhuphuka kancane kancane, ukuze i-quartz crucible ishiye kancane kancane indawo yokushisa futhi yakhe ukushintshaniswa kokushisa nendawo ezungezile; ngesikhathi esifanayo, amanzi adluliselwa epuleti lokupholisa ukuze kuncishiswe izinga lokushisa lokuncibilika kusuka phansi, futhi i-silicon ye-crystalline iqala ukwakhiwa phansi. Phakathi nenqubo yokukhula, isixhumi esibonakalayo soketshezi oluqinile sihlale sihambisana nendiza evundlile kuze kuqedwe ukukhula kwekristalu. Le nqubo ithatha cishe amahora angu-20-22.

5. Ukukhipha

Ngemuva kokuthi ukukhula kwekristalu sekuqediwe, ngenxa ye-gradient enkulu yokushisa phakathi kwephansi nangaphezulu kwekristalu, ukucindezeleka okushisayo kungase kube khona ku-ingot, okulula ukuphuka futhi ngesikhathi sokushisa kwe-silicon wafer nokulungiswa kwebhethri. . Ngakho-ke, ngemva kokuqedwa kokukhula kwe-crystal, i-silicon ingot igcinwa eduze nendawo yokuncibilika amahora angu-2-4 ukuze yenze izinga lokushisa le-silicon ingot iyunifomu futhi linciphise ukucindezeleka okushisayo.

6. Ukupholisa

Ngemuva kokuthi i-silicon ingot ifakwe esithandweni somlilo, cisha amandla okushisa, uphakamise idivayisi yokuvimbela ukushisa noma wehlise ngokuphelele i-silicon ingot, futhi ungenise ukugeleza okukhulu kwegesi ye-argon esithandweni ukuze unciphise kancane kancane izinga lokushisa le-silicon ingot eduze. izinga lokushisa legumbi; ngesikhathi esifanayo, ingcindezi yegesi esithandweni ikhuphuka kancane kancane ize ifinyelele ukucindezela komkhathi. Le nqubo ithatha cishe amahora angu-10.